LPT-7 Diode-Pumped Solid-State Laser Hōʻike
Nā kikoʻī
Semiconductor Laser | |
Mana Hoʻopuka CW | ≤ 500 mW |
Polarization | TE |
Loʻihi nalu waena | 808 ± 10 nm |
Kaulana Mahana Hana | 10 ~ 40 °C |
Ke kalaiwa nei | 0 ~ 500 mA |
Nd: YVO4Crystal | |
Nd Doping Concentration | 0.1 ~ 3 atm% |
Anana | 3×3×1 mm |
Palahalaha | < λ/10 @632.8 nm |
Ka uhi ʻana | AR@1064 nm, R<0.1%;808="" t="">90% |
KTP Crystal | |
Palena Loihi Hawewe Transmissive | 0.35 ~ 4.5 µm |
Electro-Optic Coefficient | r33=36 pm/V |
Anana | 2×2×5 mm |
Hōʻike aniani | |
Anawaena | Φ 6 mm |
Uku o ka Curvature | 50 mm |
He-Ne Alignment Laser | ≤ 1 mW @632.8 nm |
Kāleka Nānā IR | Laulā pane kikoʻī: 0.7 ~ 1.6 µm |
Makani Makani Palekana Laser | OD= 4+ no 808 nm a me 1064 nm |
Meka mana opi | 2 μW ~ 200 mW, 6 unahi |
PAPA MAHELE
ʻAʻole. | wehewehe | ʻĀpana | Qty |
1 | Kaʻaahi Optical | me ke kumu a me ka uhi lepo, ua hoʻokomo ʻia ka mana laser He-Ne i loko o ka waihona | 1 |
2 | He-Ne Laser Paʻa | me ka mea lawe | 1 |
3 | Alignment Aperture | f1 mm puka me ka mea lawe | 1 |
4 | Kānana | f10 mm puka me ka mea lawe | 1 |
5 | Hōʻike aniani | BK7, f6 mm R =50 mm me 4-axis adjustable paʻa a me ka mea lawe | 1 |
6 | KTP Crystal | 2×2×5 mm me 2-axis adjustable paʻa a me ka mea lawe | 1 |
7 | Nd:YVO4 Crystal | 3×3×1 mm me 2-axis adjustable paʻa a me ka mea lawe | 1 |
8 | 808nm LD (diode laser) | ≤ 500 mWme 4-axis adjustable paʻa a me ka mea lawe | 1 |
9 | Mea Paʻa Poʻo ʻIke | me ka mea lawe | 1 |
10 | Kāleka Nānā Infrared | 750 ~1600 nm | 1 |
11 | He-Ne Laser Tube | 1.5mW@632.8 nm | 1 |
12 | Meka mana opi | 2 μW~200 mW (6 pae) | 1 |
13 | Ke poʻo ʻike maka | me ka uhi a me ka pou | 1 |
14 | LD Manao o keia manawa | 0 ~ 500 mA | 1 |
15 | Uku Uila | 3 | |
16 | Papa kuhikuhi | V1.0 | 1 |
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