LPT-7 Diode-Pumped Solid-State Laser Hōʻike
Nā kikoʻī
| Semiconductor Laser | |
| Mana Hoʻopuka CW | ≤ 500 mW |
| Polarization | TE |
| Loʻihi nalu waena | 808 ± 10 nm |
| Kaulana Mahana Hana | 10 ~ 40 °C |
| Ke kalaiwa nei | 0 ~ 500 mA |
| Nd: YVO4Crystal | |
| Nd Doping Concentration | 0.1 ~ 3 atm% |
| Anana | 3×3×1 mm |
| Palahalaha | < λ/10 @632.8 nm |
| Ka uhi ʻana | AR@1064 nm, R<0.1%; 808="" t="">90% |
| KTP Crystal | |
| Palena Loihi Hawewe Transmissive | 0.35 ~ 4.5 µm |
| Electro-Optic Coefficient | r33=36 pm/V |
| Anana | 2×2×5 mm |
| Hōʻike aniani | |
| Anawaena | Φ 6 mm |
| Uku o ka Curvature | 50 mm |
| He-Ne Alignment Laser | ≤ 1 mW @632.8 nm |
| Kāleka Nānā IR | Ka laulā pane kikoʻī: 0.7 ~ 1.6 µm |
| Makani Makani Palekana Laser | OD= 4+ no 808 nm a me 1064 nm |
| Meka mana opi | 2 μW ~ 200 mW, 6 unahi |
PAPA MAHELE
| ʻAʻole. | wehewehe | ʻĀpana | Qty |
| 1 | Kaʻaʻi Optical | me ke kumu a me ka uhi lepo, ua hoʻokomo ʻia ka mana laser He-Ne i loko o ka waihona | 1 |
| 2 | He-Ne Laser Paʻa | me ka mea lawe | 1 |
| 3 | Alignment Aperture | f1 mm puka me ka mea lawe | 1 |
| 4 | Kānana | f10 mm puka me ka mea lawe | 1 |
| 5 | Hōʻike aniani | BK7, f6 mm R =50 mm me 4-axis adjustable paʻa a me ka mea lawe | 1 |
| 6 | KTP Crystal | 2×2×5 mm me 2-axis adjustable paʻa a me ka mea lawe | 1 |
| 7 | Nd:YVO4 Crystal | 3×3×1 mm me 2-axis adjustable paʻa a me ka mea lawe | 1 |
| 8 | 808nm LD (diode laser) | ≤ 500 mWme 4-axis adjustable paʻa a me ka mea lawe | 1 |
| 9 | Mea Paʻa Poʻo ʻIke | me ka mea lawe | 1 |
| 10 | Kāleka Nānā Infrared | 750 ~1600 nm | 1 |
| 11 | He-Ne Laser Tube | 1.5mW@632.8 nm | 1 |
| 12 | Meka mana opi | 2 μW~200 mW (6 pae) | 1 |
| 13 | Ke poʻo ʻike maka | me ka uhi a me ka pou | 1 |
| 14 | LD Manao o keia manawa | 0 ~ 500 mA | 1 |
| 15 | Uku Uila | 3 | |
| 16 | Papa kuhikuhi | V1.0 | 1 |
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